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                      快速發布采購 管理采購信息

                      FFA60UP30DN PDF Datasheet瀏覽和下載

                      型號.:
                      FFA60UP30DN
                      PDF下載:
                      下載PDF文件
                      內容描述:
                      [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
                      文件大小:
                      5115 K
                      文件頁數:
                      2 Pages
                      品牌Logo:
                      品牌名稱:
                      THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
                      供應:
                      FFA60UP30DN貨源
                      • 供貨商
                      • IC型號
                      • 廠家
                      • 批號
                      • 數量
                      • 封裝
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                      • 操作
                       瀏覽型號FFA60UP30DN的Datasheet PDF文件第2頁 
                      FFA60UP30DN
                      Pb
                      Pb Free Plating Product
                      FFA60UP30DN
                      TO-3PB(TO-3PN)
                      Cathode(Bottom Side Metal Heatsink)
                      60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
                      APPLICATION
                      ·
                      ·
                      ·
                      ·
                      ·
                      ·
                      ·
                      Freewheeling, Snubber, Clamp
                      Inversion Welder
                      PFC
                      Plating Power Supply
                      Ultrasonic Cleaner and Welder
                      Converter & Chopper
                      UPS
                      PRODUCT FEATURE
                      ·
                      Ultrafast Recovery Time
                      ·
                      Soft Recovery Characteristics
                      ·
                      Low Recovery Loss
                      ·
                      Low Forward Voltage
                      ·
                      High Surge Current Capability
                      ·
                      Low Leakage Current
                      Internal Configuration
                      Base Backside
                      Anode
                      Anode
                      Cathode
                      GENERAL DESCRIPTION
                      FFA60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
                      Absolute Maximum Ratings
                      Parameter
                      Repetitive peak reverse voltage
                      Continuous forward current
                      Single pulse forward current
                      Maximum repetitive forward current
                      Operating junction
                      Storage temperatures
                      Symbol
                      V
                      RRM
                      I
                      F(AV)
                      I
                      FSM
                      I
                      FRM
                      Tj
                      Tstg
                      Test Conditions
                      Tc =110°C
                      Tc =25°C
                      Square wave, 20kHZ
                      Values
                      300
                      60
                      600
                      150
                      175
                      -55 to +175
                      °C
                      °C
                      A
                      Units
                      V
                      Electrical characteristics (Ta=25°C unless otherwise specified)
                      Parameter
                      Breakdown voltage
                      Blocking voltage
                      Forward voltage
                      (Per Diode)
                      Reverse leakage
                      current(Per Diode)
                      Reverse recovery
                      time(Per Diode)
                      Symbol
                      V
                      BR
                      ,
                      V
                      R
                      V
                      F
                      Test Conditions
                      I
                      R
                      =100μA
                      I
                      F
                      =30A
                      I
                      F
                      =30A, Tj =125°C
                      V
                      R
                      = V
                      RRM
                      I
                      R
                      Tj=150°C, V
                      R
                      =300V
                      I
                      F
                      =0.5A, I
                      R
                      =1A, I
                      RR
                      =0.25A
                      I
                      F
                      =1A,V
                      R
                      =30V, di/dt =200A/us
                      35
                      26
                      Min
                      300
                      0.96
                      0.85
                      1.20
                      1.00
                      10
                      100
                      45
                      40
                      μA
                      V
                      Typ.
                      Max.
                      Units
                      t
                      rr
                      ns
                      Thermal characteristics
                      Junction-to-Case
                      Paramter
                      Symbol
                      R
                      θJC
                      Typ
                      0.8
                      ℃/W
                      Units
                      Rev.08T
                      ? 1995 Thinki Semiconductor Co., Ltd.
                      Page 1/2
                      http://www.thinkisemi.com.tw/
                      开奖结果