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                      F60UP30DN PDF Datasheet浏览和下载

                      型号.:
                      F60UP30DN
                      PDF下载:
                      下载PDF文件
                      内容描述:
                      [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
                      文件大小:
                      5115 K
                      文件页数:
                      2 Pages
                      品牌Logo:
                      品牌名称:
                      THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
                      供应:
                      F60UP30DN货源
                      • 供货商
                      • IC型号
                      • 厂家
                      • 批号
                      • 数量
                      • 封装
                      • 单价/备注
                      • 操作
                       浏览型号F60UP30DN的Datasheet PDF文件第2页 
                      F60UP30DN
                      F60UP30DN
                      TO-3PB(TO-3PN)
                      Cathode(Bottom Side Metal Heatsink)
                      Pb
                      Pb Free Plating Product
                      60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
                      APPLICATION
                      ·
                      ·
                      ·
                      ·
                      ·
                      ·
                      ·
                      Freewheeling, Snubber, Clamp
                      Inversion Welder
                      PFC
                      Plating Power Supply
                      Ultrasonic Cleaner and Welder
                      Converter & Chopper
                      UPS
                      PRODUCT FEATURE
                      ·
                      Ultrafast Recovery Time
                      ·
                      Soft Recovery Characteristics
                      ·
                      Low Recovery Loss
                      ·
                      Low Forward Voltage
                      ·
                      High Surge Current Capability
                      ·
                      Low Leakage Current
                      Internal Configuration
                      Base Backside
                      Anode
                      Anode
                      Cathode
                      GENERAL DESCRIPTION
                      F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
                      Absolute Maximum Ratings
                      Parameter
                      Repetitive peak reverse voltage
                      Continuous forward current
                      Single pulse forward current
                      Maximum repetitive forward current
                      Operating junction
                      Storage temperatures
                      Symbol
                      V
                      RRM
                      I
                      F(AV)
                      I
                      FSM
                      I
                      FRM
                      Tj
                      Tstg
                      Test Conditions
                      Tc =110°C
                      Tc =25°C
                      Square wave, 20kHZ
                      Values
                      300
                      60
                      600
                      150
                      175
                      -55 to +175
                      °C
                      °C
                      A
                      Units
                      V
                      Electrical characteristics (Ta=25°C unless otherwise specified)
                      Parameter
                      Breakdown voltage
                      Blocking voltage
                      Forward voltage
                      (Per Diode)
                      Reverse leakage
                      current(Per Diode)
                      Reverse recovery
                      time(Per Diode)
                      Symbol
                      V
                      BR
                      ,
                      V
                      R
                      V
                      F
                      Test Conditions
                      I
                      R
                      =100μA
                      I
                      F
                      =30A
                      I
                      F
                      =30A, Tj =125°C
                      V
                      R
                      = V
                      RRM
                      I
                      R
                      Tj=150°C, V
                      R
                      =300V
                      I
                      F
                      =0.5A, I
                      R
                      =1A, I
                      RR
                      =0.25A
                      I
                      F
                      =1A,V
                      R
                      =30V, di/dt =200A/us
                      35
                      26
                      Min
                      300
                      0.96
                      0.85
                      1.20
                      1.00
                      10
                      100
                      45
                      40
                      μA
                      V
                      Typ.
                      Max.
                      Units
                      t
                      rr
                      ns
                      Thermal characteristics
                      Junction-to-Case
                      Paramter
                      Symbol
                      R
                      θJC
                      Typ
                      0.8
                      ℃/W
                      Units
                      Rev.08T
                      ? 1995 Thinki Semiconductor Co., Ltd.
                      Page 1/2
                      http://www.thinkisemi.com.tw/
                      开奖结果